Pulsed-laser annealing of ion-implanted silicon / (Record no. 282319)

000 -LEADER
fixed length control field 00628nam a22002177a 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20151130091446.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 151130b xxu||||| |||| 00| 0 eng d
040 ## - CATALOGING SOURCE
Transcribing agency ug
050 ## - LIBRARY OF CONGRESS CALL NUMBER
Classification number QD63 L3
Item number H65
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Hoonhout, Dick
245 ## - TITLE STATEMENT
Title Pulsed-laser annealing of ion-implanted silicon /
Statement of responsibility, etc Dick Hoonhout. -
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc [Amsterdam :
Name of publisher, distributor, etc s.n.,
Date of publication, distribution, etc 1980]
300 ## - PHYSICAL DESCRIPTION
Extent 123 p. :
Other physical details graphs.
501 ## - WITH NOTE
With note Thesis
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Lasers, Effect of radiation on.
Topical term or geographic name as entry element Annealing of crystals
Topical term or geographic name as entry element Silicon crystals.
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Entry Department CRL
Source of classification or shelving scheme
Holdings
Price effective from Permanent Location Date last seen Not for loan Date acquired Source of classification or shelving scheme Koha item type Shelving location Barcode Damaged status Lost status Withdrawn status Current Location Full call number
2015-11-30Turkeyen Campus2015-11-30 2015-11-30 3 Weeks LoanScience & Technology164049   Turkeyen CampusQD63 L3 H65