Short-channel organic thin-film transistors : (Record no. 289559)

000 -LEADER
fixed length control field 01861nam a22002297a 4500
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20160329105026.0
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 160310b xxu||||| |||| 00| 0 eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783319188959
040 ## - CATALOGING SOURCE
Transcribing agency UG
Original cataloging agency ug
050 00 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7871.96.T45
Item number Z35
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Zaki, Tarek.
245 10 - TITLE STATEMENT
Title Short-channel organic thin-film transistors :
Remainder of title fabrication, characterization, modeling and circuit demonstration /
Statement of responsibility, etc Tarek Zaki.
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc Switzerland :
Name of publisher, distributor, etc Springer,
Date of publication, distribution, etc 2015.
300 ## - PHYSICAL DESCRIPTION
Extent xxiii, 220 p. :
Other physical details ill., photos., graphs.
490 #0 - SERIES STATEMENT
Series statement (Springer theses)
504 ## - BIBLIOGRAPHY, ETC. NOTE
Bibliography, etc Includes bibliographical references.
520 ## - SUMMARY, ETC.
Summary, etc This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature fabrication process. Plastic electronics based on organic thin-film transistors (OTFTs) pave the way for cheap, flexible and large-area products. Over the past few years, OTFTs have undergone remarkable advances in terms of reliability, performance and scale of integration. Many factors contribute to the allure of this technology; the masks exhibit excellent stiffness and stability, thus allowing OTFTs with submicrometer channel lengths and superb device uniformity to be patterned. Furthermore, the OTFTs employ an ultra-thin gate dielectric that provides a sufficiently high capacitance to enable the transistors to operate at voltages as low as 3 V. The critical challenges in this development are the subtle mechanisms that govern the properties of aggressively scaled OTFTs. These mechanisms, dictated by device physics, are well described and implemented into circuit-design tools to ensure adequate simulation accuracy.
541 ## - IMMEDIATE SOURCE OF ACQUISITION NOTE
Donor Jermey Matthews
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Thin film transistors.
Topical term or geographic name as entry element Organic thin films.
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Entry Department TSD
Source of classification or shelving scheme
Acquisition - Verified JB
Verified KB
Holdings
Price effective from Permanent Location Date last seen Not for loan Date acquired Source of classification or shelving scheme Koha item type Shelving location Barcode Damaged status Lost status Withdrawn status Current Location Full call number
2016-03-10Turkeyen Campus2016-03-10 2016-03-10 3 Weeks LoanScience & Technology285513   Turkeyen CampusTK7871.96.T45 Z35