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SiC materials and devices.
Publication:
New Jersey ; | London : World Scientific, 2006
. 1 online resource (v, 1033 p.) :
, Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner.
Date:2006
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2. |
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SiC materials and devices.
Publication:
Singapore ; | New Jersey : World Scientific, 2007
. 1 online resource (881 p.) :
, Material reprinted from International Journal of High Speed Electronics and Systems, v. 15 no. 4 (2005), with original paging in upper corner.
Date:2007
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3. |
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Transistors
by Levinshte�in, M. E.
Publication:
Singapore ; | River Edge, N.J. : World Scientific, 1998
. 1 online resource (xii, 241 pages) :
Date:1998
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4. |
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Breakdown phenomena in semiconductors and semiconductor devices
by Levinshte�in, M. E.
Publication:
New Jersey ; | London : World Scientific, 2005
. 1 online resource (xiii, 208 p.) :
Date:2005
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The spirit of Russian science
by Levinshte�in, M. E.
Publication:
River Edge, N.J. : World Scientific, 2002
. 1 online resource (xi, 98 p.)
Date:2002
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